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2024
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The industry's first 300mm silicon carbide substrate was introduced
On November 13, Tianyue Advanced, a major domestic silicon carbide substrate manufacturer, released the industry's first 300mm (12-inch) silicon carbide substrate product at the 2024 Semicon Europe 2024 in Germany, marking its official entry into a new era of super-large silicon carbide substrates.
On November 13, Tianyue Advanced, a major domestic silicon carbide substrate manufacturer, released the industry's first 300mm (12-inch) silicon carbide substrate product at the 2024 Semicon Europe 2024 in Germany, marking its official entry into a new era of super-large silicon carbide substrates.
Tianyue Advanced said that the 300mm silicon carbide substrate material can further expand the area that can be used for chip manufacturing on a single wafer and greatly increase the output of qualified chips. Under the same production conditions, the output can be significantly increased, the unit cost will be reduced, and the economic benefits will be further improved, which will provide the possibility for the larger-scale application of silicon carbide materials.
With the rapid development of clean energy such as new energy vehicles, photovoltaic energy storage, 5G communication and high-voltage smart grid, the demand for silicon carbide-based devices that meet the working conditions of high power, high voltage and high frequency has also grown by breakthroughs, among which silicon carbide substrate, a key upstream material, is particularly important. The industry notes that the larger the size of the silicon carbide substrate, the larger its area, which means that more chips can be manufactured on a single substrate, resulting in higher production efficiency. At the same time, the large size of the substrate reduces edge waste, helping to reduce the cost per chip.
From the perspective of silicon carbide substrate size, the 4-inch substrate is mainly used to manufacture gallium nitride RF devices; The 6-inch substrate is the mainstream product specification in the current conductive silicon carbide market; In terms of 8-inch substrates, leading companies in the industry such as Wolfspeed and Infineon have successfully developed and built 8-inch product production lines. Compared to 6-inch substrates, 8-inch substrates can provide higher energy efficiency and lower costs. In terms of 12-inch substrates, it has not yet been widely used, and the industry said that in the future, with the continuous progress of technology and the reduction of costs, 12-inch substrates are expected to become an important development direction of silicon carbide substrates.
Silicon carbide substrates are constantly developing in the direction of large sizes, but the production technology of large-size substrates is more difficult and requires advanced production equipment and technical support, which also means that more R&D investment and production costs are required. Therefore, enterprises still need to make continuous efforts to expand production capacity and improve product quality.
With the wide application of silicon carbide materials in new energy vehicles, photovoltaics, 5G communications and other fields, the market demand will also continue to grow, providing a broad development space for silicon carbide substrate enterprises.
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